Datasheet > 2SD1164-ZM-E2-AZ

2SD1164-ZM-E2-AZ

更新时间： 2024-02-21 07:41:31

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	1789K
描述
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252

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技术参数
数据手册

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2SD1164-ZM-E2-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	2 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	2000	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SD1164-ZM-E2-AZ 数据手册

Preliminary Data Sheet

R07DS0254EJ0400

Rev.4.00

2SD1164-Z

SILICON POWER TRANSISTOR

Feb 24, 2011

DESCRIPTION

The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

FEATURES

•

High hFE = 2 000 to 30 000

<R>

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

CHARACTERISTICS

Collector to Base Voltage

SYMBOL

VCBO

VCEO

VEBO

IC(DC)

I^C(pulse)

P^T

RATINGS

UNIT

150

Collector to Emitter Voltage

Base to Emitter Voltage

8.0

Collector Current (DC)

Collector Current (pulse)^{Note 1}

Total Power Dissipation (TA = 25°C)^{Note 2}

Junction Temperature

2.0

°C

150

Storage Temperature

Tstg

−55 to +150

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm²× 0.7 mm

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R07DS0254EJ0400 Rev.4.00

Feb 24, 2011

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