生命周期: | Active | 包装说明: | MP-3, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 50 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 8000 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SD1164-ZK-E1-AZ | RENESAS | TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252 |
获取价格 |
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2SD1164-ZK-E2-AZ | RENESAS | TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252 |
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2SD1164-ZL-AZ | RENESAS | 暂无描述 |
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2SD1164-ZL-E1 | RENESAS | 2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN |
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2SD1164-ZL-E1 | NEC | 2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN |
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2SD1164-ZL-E1-AZ | RENESAS | TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,2A I(C),TO-252 |
获取价格 |