是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最大集电极电流 (IC): | 2 A |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 2000 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 子类别: | Other Transistors |
表面贴装: | YES |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1164K | ETC |
获取价格 |
BJT | |
2SD1164K-Z | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR | |
2SD1164L | ETC |
获取价格 |
BJT | |
2SD1164L-Z | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR | |
2SD1164M | ETC |
获取价格 |
BJT | |
2SD1164M-Z | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR | |
2SD1164-Z | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 | |
2SD1164-Z | RENESAS |
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SILICON POWER TRANSISTOR | |
2SD1164-Z-E1 | RENESAS |
获取价格 |
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
2SD1164-Z-E1 | NEC |
获取价格 |
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 |