Datasheet > 晶体管 > 小信号双极晶体管> 2SC6026MFV-GR

2SC6026MFV-GR

更新时间： 2024-11-06 12:54:31

品牌	Logo	应用领域
东芝 - TOSHIBA		运算放大器
页数	文件大小	规格书
4页	154K
描述
General-Purpose Amplifier Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC6026MFV-GR 数据手册

2SC6026MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC6026MFV

General-Purpose Amplifier Applications

Unit: mm

1.2 ± 0.05

•

High voltage and high current

: V_CEO= 50 V, I_C= 150 mA (max)

Excellent h linearity :

0.80 ± 0.05

(I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.)

C FE C

•

High h

= 120 to 400

Complementary to 2SA2154MFV

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

1.BASE

2.EMITTER

3.COLLECTOR

150

°C

VESM

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150*

150

JEDEC

JEITA

―

−55 to 150

stg

TOSHIBA

2-1L1A

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in

Weight: 1.5 mg (typ.)

the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

Mount Pad Dimensions (Reference)

0.5

0.45

1.15

0.4

0.45

0.4

Unit: mm

2010-05-19

12 3 4

中文翻译

下载PDF

与2SC6026MFV-GR相关器件

型号	品牌	获取价格	描述	数据表
2SC6026MFV-GR(L3SM	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC6026MFV-GR(TPL3)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-416VAR
2SC6026MFV-Y	TOSHIBA	获取价格	General-Purpose Amplifier Applications
2SC6026MFV-Y(L3MAA	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC6026MFV-Y(L3PAV	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC6026MFV-Y(L3SMM	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC6026MFV-Y(TPL3)	TOSHIBA	获取价格	Bipolar Transistors 150mA 50V
2SC6026MFV-Y(TPL3,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-416VAR
2SC6026MFV-Y,L3F(B	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SC6026-Y	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN,