Datasheet > 2SC6046

2SC6046

更新时间： 2024-11-06 03:56:35

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
4页	65K
描述
GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

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2SC6046 数据手册

2SC6046

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

Unit：mm

OUTLINE DRAWING

DESCRIPTION

2SC6046 is a silicon NPN epitaxial type transistor designed with

high collector current, low V_CE（sat）.

2.5

1.5

0.5

①

FEATURE

●High collector current

③

I_C（MAX）=600mA

●Low collector to emitter saturation voltage

②

_CE（sat）<0.3V_max(IC=150mA、IB=15mA）

APPLICATION

For switching application, small type motor drive application.

TERMINAL CONNECTOR

MAXIMUM RATINGS（Ta.=25℃）

①：BASE

②：EMITTER

③：COLLECTOR

EIAJ：SC-59

JEDEC：TO-236

Resemblance

記号

V_CEO

V_CBO

V_EBO

I_C

項

目

定格値

単位

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Collector current

600

℃

MARKING

P_C

Collector dissipation

200

T_j

Junction temperature

Storage temperature

+150

-55～+150

TypeName

T_stg

℃

B W

・

ELECTRICAL CHARACTERISTICS（Ta.=25℃）

Limits

Typ

Symbol

Parameter

Test condition

Unit

Min

Max

V_（BR）CEOC to E break down voltage

V_（BR）CBOC to B break down voltage

V_（BR）EBOE to B break down voltage

IC=1mA、IB=0

IC=10uA、IE=0

IE=10uA、IC=0

I_CBO

I_EBO

Collector cut off current

Emitter cut off current

DC forward current gain

C to E saturation voltage

B to E saturation voltage

Gain band width product

Collector output capacitance

VCB=60V、IE=0

100

300

0.3

---

VEB=3V、IC=0

h_FE

IC=150mA、VCE=10V

IC=150mA、IB=15mA

IE=-20mA、VCE=20V、f=100MHz

VCB=10V、f=1MHz

100

0.6

V_CE（sat）

V_BE（sat）

f_T

1.2

250

MHz

C_ob

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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