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2SC6071

更新时间: 2024-11-09 03:56:35
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管
页数 文件大小 规格书
4页 38K
描述
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SC6071 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SC6071 数据手册

 浏览型号2SC6071的Datasheet PDF文件第2页浏览型号2SC6071的Datasheet PDF文件第3页浏览型号2SC6071的Datasheet PDF文件第4页 
Ordering number : ENA0271  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
2SC6071  
High-Current Switching Applications  
Applications  
Relay drivers, lamp drivers, motor drivers.  
Features  
Adoption of MBIT process.  
Large current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
120  
120  
50  
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
8
V
I
10  
A
C
Collector Current (Pulse)  
Base Current  
I
PW100µs  
Tc=25°C  
13  
A
CP  
I
B
2
A
0.95  
20  
W
W
°C  
°C  
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
10  
I
V
V
V
V
V
=40V, I =0A  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
Emitter Cutoff Current  
I
=4V, I =0A  
10  
EBO  
C
DC Current Gain  
h
FE  
=2V, I =1A  
200  
700  
C
Gain-Bandwidth Product  
Output Capacitance  
f
=5V, I =1A  
200  
MHz  
pF  
T
C
Cob  
=10V, f=1MHz  
60  
180  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitterr Saturation Voltage  
V
V
(sat)  
I
C
C
=5A, I =250mA  
360  
1.4  
mV  
V
CE  
B
(sat)  
I
=5A, I =250mA  
0.93  
BE  
B
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
80906 / 22406EA MS IM TB-00002046 No. A0271-1/4  

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