生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.8 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC6071(TP) | ONSEMI |
获取价格 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,10A I(C),TO-251VAR | |
2SC6071-TL | ONSEMI |
获取价格 |
Small Signal Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 | |
2SC6075 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type | |
2SC6076 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) | |
2SC6076(TE16L1) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-252VAR | |
2SC6076(TE16L1,NV) | TOSHIBA |
获取价格 |
TRANS NPN 80V 3A PW MOLD | |
2SC6076(TE16L1,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-252VAR | |
2SC6077 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) | |
2SC6078 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) | |
2SC6079 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type |