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2SC6084

更新时间: 2024-10-14 03:56:35
品牌 Logo 应用领域
三洋 - SANYO 晶体稳压器开关晶体管局域网
页数 文件大小 规格书
4页 47K
描述
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

2SC6084 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.44其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC6084 数据手册

 浏览型号2SC6084的Datasheet PDF文件第2页浏览型号2SC6084的Datasheet PDF文件第3页浏览型号2SC6084的Datasheet PDF文件第4页 
Ordering number : ENA0630  
SANYO Sem iconductors  
DATA S HEET  
NPN Triple Diffused Planar Silicon Transistor  
2SC6084  
Switching Regulator Applications  
Features  
High speed.  
High breakdown voltage (V  
=1500V).  
CBO  
High reliability (Adoption of HVP process).  
Adoption of MBIT process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
1500  
800  
5
V
V
I
5
A
C
Collector Current (Pulse)  
I
12  
A
CP  
1.75  
50  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=800V, I =0A  
Unit  
min  
max  
I
V
10  
µA  
mA  
V
CBO  
CB  
E
Collector Cutoff Current  
I
V
CE  
=1500V, R =0  
BE  
1.0  
CES  
(sus)  
Collector Sustain Voltage  
V
I
C
=100mA, I =0A  
800  
CEO  
B
Emitter Cutoff Current  
I
V
=4V, I =0A  
1.0  
3
mA  
V
EBO  
EB  
C
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
V
(sat)  
I
C
C
=2.7A, I =0.54A  
B
CE  
BE  
V
(sat)  
I
=2.7A, I =0.54A  
1.5  
V
B
h
h
1
2
V
=5V, I =0.5A  
10  
5
FE  
FE  
CE  
CE  
C
DC Current Gain  
Fall Time  
V
=5V, I =3A  
7
C
t
f
I
=1.8A, I =0.36A, I =--0.72A  
0.2  
µs  
C B1 B2  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before using any SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D1306KC TI IM TB-00002398 No. A0630-1/4  

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