Ordering number : ENA0994
2SC6091
SANYO Sem iconductors
DATA S HEET
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
2SC6091
Features
• High speed.
• High breakdown voltage (V
=1500V).
CBO
• Adoption of high reliability HVP process.
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
1500
700
5
V
V
I
C
8
A
Collector Current (Pulse)
I
20
A
CP
3.0
65
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=800V, I =0A
Unit
min
max
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
I
V
10
µA
mA
V
CBO
CB
CE
E
I
V
=1500V, R =0Ω
BE
10
CES
(sus)
V
I
=100mA, I =0A
700
CEO
C
B
I
V
=4V, I =0A
1
mA
EBO
EB
C
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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