2SC6053E

更新时间： 2024-11-09 13:04:23

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
4页	76K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SC6053E 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SC6053E 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SC6053

FOR HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SC6053 is a mini package resin sealed silicon NPN epitaxial

type transistor designed with high collector current, small VCE(sat).

2.5

1.5

0.5

①

②

FEATURE

●Super mini package for easy mounting

●High collector current I_C= 650mA

●Low collector to emitter saturation voltage

VCE(sat) = 0.5V max

③

APPLICATION

Small type motor drive, relay drive, power supply

TERMINAL CONNECTER

①：BASE

②：EMITTER

EIAJ ： SC-59

MAXIMUM RATINGS（Ta=25℃）

③：COLLECTOR

JEDEC ： TO-236 resemblance

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

Unit

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

MARKING

650

℃

・ B F

P_c

Collector dissipation

Junction temperature

Storage temperature

150

T_j

＋150

-55～＋150

T_stg

ｈＦＥ ITEM

TYPE NAME

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

Typ

Max

C to E break down voltage

C to B break down voltage

E to B break down voltage

Collector cut off current

Emitter cut off current

V_（BR）CEOIC=100μA、RBE=∞

V_（BR）CBOIC=10μA、IE=0

V_（BR）EBOIE=10μA、IC=0

I_CBO

I_EBO

VCB=25V、IE=0

VEB=2V、IC=0

μA

DC forward current gain

h_FE*

VCE=4V、IC=100mA

150

800

0.5

---

C to E saturation voltage

V_CE（sat）IC=500mA、IB=25mA

fT VCE=6V、IE=-10mA

0.3

Gain band width product

290

MHz

＊： It shows h_FEclassification in right table.

Item

hFE

150 to 300

250 to 500

400 to 800

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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