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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2SC605(B)K | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic |
|
| 2SC605(B)L | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic |
|
| 2SC605(B)M | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic |
|
| 2SC6050 | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, 0.60 X |
|
| 2SC6052 | TOSHIBA |
获取价格 |
TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP |
|
| 2SC6052(TE16L1) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-252 |
|
| 2SC6052(TE16L1,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-252 |
|
| 2SC6053 | ISAHAYA |
获取价格 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
|
| 2SC6053_10 | ISAHAYA |
获取价格 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
|
| 2SC6053E | ISAHAYA |
获取价格 |
Transistor |
|
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