生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.45 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 65 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 3.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 400 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC6046 | ISAHAYA |
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GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |
2SC6046_10 | ISAHAYA |
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FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |
2SC605 | ETC |
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NPN SILICON TRANSISTOR | |
2SC605(B)K | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC605(B)L | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC605(B)M | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC6050 | PANASONIC |
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Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, 0.60 X | |
2SC6052 | TOSHIBA |
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TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP | |
2SC6052(TE16L1) | TOSHIBA |
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TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-252 | |
2SC6052(TE16L1,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-252 |