Datasheet > 2SC6033_06

2SC6033_06

更新时间： 2024-11-06 03:56:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	213K
描述
Silicon NPN Epitaxial Type

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2SC6033_06 数据手册

2SC6033

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6033

Unit : mm

High-Speed Swtching Applications

ＴＳＭ

+0.2

2.8-0.3

DC-DC Converter Applications

Storobe Flash Applications

+0.2

1.6-0.1

•

High DC current gain: h

= 250 to 400 (I = 0.3 A)

FE C

Low collector-emitter saturation: V

= 0.18 V (max)

CE (sat)

High-speed switching: t = 38 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

100

CBO

CEX

CEO

EBO

1. Base

2. Emitter

3. Collector

Collector-emitter voltage

Emitter-base voltage

Collector current

2.5

－

JEDEC

JEITA

Pulse

Base current

0.3

－

2-3S1A

TOSHIBA

t = 10s

1.00

0.625

150

−55 to 150

Collector power

dissipation

(Note 1)

Weight: 0.01g (Typ.)

Junction temperature

°C

Storage temperature range

stg

Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-13

12 3 4 5

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