Datasheet > 2SC6026MFV-Y(L3PAV

2SC6026MFV-Y(L3PAV

更新时间： 2024-11-07 06:26:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	162K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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2SC6026MFV-Y(L3PAV 数据手册

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2SC6026MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC6026MFV

General-Purpose Amplifier Applications

Unit: mm

1.2 ± 0.05

•

High voltage and high current

: V_CEO= 50 V, I_C= 150 mA (max)

Excellent h linearity :

0.80 ± 0.05

(I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.)

C FE C

•

High h

= 120 to 400

Complementary to 2SA2154MFV

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

1.BASE

2.EMITTER

3.COLLECTOR

150

°C

VESM

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150*

150

JEDEC

JEITA

―

−55 to 150

stg

TOSHIBA

2-1L1A

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in

Weight: 1.5 mg (typ.)

the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

Mount Pad Dimensions (Reference)

0.5

0.45

1.15

0.4

0.45

0.4

Unit: mm

Start of commercial production

2005-02

2014-03-01

12 3 4

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