Datasheet > 2SC6033

2SC6033

更新时间： 2024-11-05 22:35:55

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	212K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type

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2SC6033 数据手册

2SC6033

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6033

Unit : mm

High-Speed Swtching Applications

ＴＳＭ

+0.2

2.8-0.3

DC-DC Converter Applications

Storobe Flash Applications

+0.2

1.6-0.1

•

High DC current gain: h

= 250 to 400 (I = 0.3 A)

Low collector-emitter saturation: V

= 0.18 V (max)

CE (sat)

High-speed switching: t = 38 ns (typ.)

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

CBO

CEX

CEO

EBO

1. Base

2. Emitter

3. Collector

Collector-emitter voltage

Emitter-base voltage

Collector current

2.5

－

JEDEC

JEITA

Pulse

Base current

0.3

1.00

－

2-3S1A

TOSHIBA

t = 10s

Collector power

dissipation

Pc (Note 1)

Weight: 0.01g (Typ.)

0.625

150

Junction temperature

°C

Storage temperature range

−55 to 150

stg

Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm²)

2004-07-01

12 3 4 5

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与2SC6033相关器件

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2SC6033_06	TOSHIBA	获取价格	Silicon NPN Epitaxial Type
2SC6034	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type
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2SC6036	PANASONIC	获取价格	Silicon NPN epitaxial planar type
2SC6036G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SC6037G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SC6040	TOSHIBA	获取价格	High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC
2SC6041	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
2SC6042	TOSHIBA	获取价格	Silicon NPN Triple Diffused Type