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2SC6026CT-Y(TPL3) PDF预览

2SC6026CT-Y(TPL3)

更新时间： 2024-11-06 14:27:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 137K
描述
Bipolar Transistors 100mA 50V

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中文翻译

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2SC6026CT-Y(TPL3) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.53Base Number Matches：1

2SC6026CT-Y(TPL3) 数据手册

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2SC6026  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SC6026  
General-Purpose Amplifier Applications  
Unit: mm  
•
High voltage and high current  
: VCEO = 50 V, IC = 100 mA (max)  
•
•
•
Excellent h linearity :  
h
(I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.)  
FE  
FE C FE C  
High h  
h
= 120~400  
FE  
:
FE  
Complementary to 2SA2154  
1
3
Absolute Maximum Ratings (Ta = 25°C)  
2
0.8±0.05  
1.0±0.05  
0.1±0.05  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
0.1±0.05  
5
V
I
100  
30  
mA  
mA  
mW  
°C  
°C  
C
1.BASE  
2.EMITTER  
3.COLLECTOR  
Base current  
I
B
fSM  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
T
150  
−55~150  
j
JEDEC  
JEITA  
―
―
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-1E1A  
Weight: 0.6 mg (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 60 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cutoff current  
Emitter cutoff current  
I
V
V
V
⎯
⎯
⎯
⎯
0.1  
0.1  
400  
0.25  
⎯
μA  
μA  
⎯
CBO  
CB  
E
I
= 5 V, I = 0  
C
EBO  
EB  
CE  
DC current gain  
h
(Note)  
= 6 V, I = 2 mA  
120  
⎯
⎯
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 100 mA, I = 10 mA  
0.1  
⎯
V
CE (sat)  
C
B
f
V
V
= 10 V, I = 1 mA  
60  
⎯
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
0.95  
⎯
ob  
E
Note: h classification Y (F): 120~240, GR (H): 200~400  
FE  
(
) marking symbol  
Marking  
Type Name  
Rank  
h
FE  
7F  
1
2007-11-01  
123

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与2SC6026CT-Y(TPL3)相关器件

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2SC6026MFV-GR TOSHIBA

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 		General-Purpose Amplifier Applications
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 		TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-416VAR
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2SC6026MFV-Y(L3MAA TOSHIBA

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC6026MFV-Y(L3PAV TOSHIBA

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC6026MFV-Y(L3SMM TOSHIBA

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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