是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-XBCC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Bismuth (Sn/Bi) | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5849 | RENESAS |
获取价格 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier | |
2SC5849 | HITACHI |
获取价格 |
Silicon NPN Epitaxial VHF/UHF wide band amplifier | |
2SC5849WY-TR-E | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC | |
2SC5850 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC5850B | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850C | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850D | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850LBTL-E | RENESAS |
获取价格 |
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 | |
2SC5850LDTL-E | RENESAS |
获取价格 |
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 | |
2SC5851 | RENESAS |
获取价格 |
Silicon NPN Epitaxial |