生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.4 | 最大集电极电流 (IC): | 0.08 A |
基于收集器的最大容量: | 1.15 pF | 集电极-发射极最大电压: | 6 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 90 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.08 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5849WY-TR-E | RENESAS |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC | |
2SC5850 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC5850B | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850C | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850D | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850LBTL-E | RENESAS |
获取价格 |
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 | |
2SC5850LDTL-E | RENESAS |
获取价格 |
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 | |
2SC5851 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC5851A | ETC |
获取价格 |
BJT | |
2SC5851B | ETC |
获取价格 |
BJT |