2SC5863

更新时间： 2024-09-17 22:52:47

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松下 - PANASONIC		/
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描述
Silicon NPN epitaxial planar type

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2SC5863 数据手册

Transistors

2SC5863

Silicon NPN epitaxial planar type

Unit: mm

For general amplification

+0.10

–0.05

0.40

+0.10

0.16

–0.06

■ Features

• High collector-emitter voltage (Base open) V_CEO

• High transition frequency f_T

(0.95) (0.95)

1.9 ^0.1

+0.20

2.90

–0.05

■ Absolute Maximum Ratings T_a= 25°C

10˚

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

300

1: Base

2: Emitter

3: Collector

300

EIAJ: SC-59

Mini3-G1 Package

Collector current

I_C

I_CP

P_C

T_j

°C

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

100

Marking Symbol: 7H

200

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

V_EBO

I_CEO

Conditions

Min

300

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio ^*

I_C= 100 µA, I_B= 0

I_E= 1 µA, I_C= 0

V_CE= 120 V, I_B= 0

V_CE= 10 V, I_C= 5 mA

µA



h_FE

220

1.2

Collector-emitter saturation voltage

V_CE(sat)I_C= 50 mA, I_B= 5 mA

C_obV_CB= 10 V, I_E= 0, f = 1 MHz

Collector output capacitance

(Common base, input open circuited)

Transition frequency

f_T

V_CB= 10 V, I_E= −10 mA, f = 200 MHz 50

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

60 to 150

100 to 220

Publication date: November 2002

SJC00290AED

12 3

中文翻译

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