Datasheet > 2SC5874S

2SC5874S

更新时间： 2024-09-23 00:00:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	89K
描述
Medium power transistor (30V, 1.0A)

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2SC5874S 数据手册

2SC5874S

Transistors

Medium power transistor (30V, 1.0A)

2SC5874S

!External dimensions (Unit : mm)

!Features

1) High speed switching.

(Tf : Typ. : 35ns at IC = 1.0A)

2) Low saturation voltage, typically

4.0

2.0

SPT

0.45

2.5

(Typ. 150mV at IC = 1.0A, IB = 100mA)

3) Strong discharge power for inductive load and

capacitance load.

0.5

0.45

5.0

(1) Emitter

(2) Collector

(3) Base

4) Complements the 2SA2086S

Taping specifications

(1) (2) (3)

Symbol : C5874S

!Applications

Small signal low frequency amplifier

High speed switching

!Structure

NPN Silicon epitaxial planar transistor

!Packaging specifications

Package

Taping

Code

Type

Basic ordering unit (pieces)

5000

2SC5874S

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector current

1.0

2.0

300

150

∗1

∗2

Pulsed

°C

Power dissipation

Junction temperature

Range of storage temperature

Tstg

−55 to 150

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

1/3

12 3 4

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