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2SC5885 PDF预览

2SC5885

更新时间: 2024-09-25 06:17:07
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 218K
描述
Silicon NPN Power Transistor

2SC5885 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

2SC5885 数据手册

 浏览型号2SC5885的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC5885  
DESCRIPTION  
·High Breakdown Voltage-  
: VCBO= 1500V (Min)  
·Wide Area of Safe Operation  
·Built-in Damper Diode  
APPLICATIONS  
·Horizontal deflection output for TV, CRT monitor  
applicaitions.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCES  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
1500  
1500  
V
5
V
Collector Current- Continuous  
Base Current- Continuous  
Collector Current-Pulse  
6
A
IB  
3
A
ICP  
9
2
A
Collector Power Dissipation  
@ Ta=25℃  
PC  
W
Collector Power Dissipation  
@ TC=25℃  
30  
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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