Datasheet > 2SC5875

2SC5875

更新时间： 2024-02-20 22:20:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	89K
描述
Power transistor (30V, 2A)

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2SC5875 数据手册

2SC5875

Transistors

Power transistor (30V, 2A)

2SC5875

!External dimensions (Unit : mm)

!Features

1) High speed switching.

(Tf : Typ. : 20ns at IC = 2A)

2) Low saturation voltage, typically

ATV

2.5

6.8

(Typ. 200mV at IC = 1.0A, IB = 0.1A)

0.65Max.

3) Strong discharge power for inductive load and

capacitance load.

0.5

( )

( ) ( )

2 3

2.54 2.54

1.05

0.45

(1) Emitter

(2) Collector

(3) Base

4) Complements the 2SA2087

Taping specifications

Symbol : C5875

!Applications

Low frequency amplifier

High speed switching

!Structure

NPN Silicon epitaxial planar transistor

!Packaging specifications

Package

Taping

TV2

Code

Type

Basic ordering unit (pieces)

2500

2SC5875

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector current

∗

Pulsed

°C

Power dissipation

1.0

150

Junction temperature

Tstg

Range of storage temperature

−55 to 150

∗Pw=10ms

1/3

12 3 4

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