5秒后页面跳转
2SC5866TLR PDF预览

2SC5866TLR

更新时间: 2024-09-23 12:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 306K
描述
Medium power transistor (60V, 2A)

2SC5866TLR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SC-96
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:13 weeks风险等级:1.72
Is Samacsys:N最大集电极电流 (IC):2 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SC5866TLR 数据手册

 浏览型号2SC5866TLR的Datasheet PDF文件第2页浏览型号2SC5866TLR的Datasheet PDF文件第3页浏览型号2SC5866TLR的Datasheet PDF文件第4页 
Medium power transistor (60V, 2A)  
2SC5866  
Features  
Dimensions (Unit : mm)  
1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)  
2) Low saturation voltage, typically  
(Typ. : 200mV at IC = 1.0m, IB = 0.1A)  
3) Strong discharge power for inductive load and  
capacitance load.  
2.8  
1.6  
TSMT3  
4) Complements the 2SA2094  
Each lead has same dimensions  
(1)Base  
0.3 0.6  
(2)Emitter  
(3)Collector  
Abbreviated symbol : VL  
Applications  
Low frequency amplifier  
High speed switching  
Structure  
NPN Silicon epitaxial planar transistor  
Packaging specifications  
Package  
Code  
Taping  
TL  
Type  
Basic ordering unit  
(pieces)  
3000  
2SC5866  
Absolute maximum ratings (Ta=25C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
60  
60  
6
V
V
V
A
A
I
C
2
Collector current  
Power dissipation  
1
2
I
CP  
4
PC  
500  
mW  
Junction temperature  
Tj  
150  
°C  
°C  
Range of storage temperature  
Tstg  
55 to +150  
1 Pw=10ms  
2 Each terminal mounted on a recommended land.  
www.rohm.com  
2011.03 - Rev.A  
1/3  
c
2011 ROHM Co., Ltd. All rights reserved.  

2SC5866TLR 替代型号

型号 品牌 替代类型 描述 数据表
2SC5866TLQ ROHM

类似代替

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP

与2SC5866TLR相关器件

型号 品牌 获取价格 描述 数据表
2SC5868 ROHM

获取价格

Medium power transistor (60V, 0.5A)
2SC5868_11 ROHM

获取价格

Medium power transistor (60V, 0.5A)
2SC5868TL ROHM

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3,
2SC5868TLQ ROHM

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3,
2SC5873S ROHM

获取价格

Medium power transistor (30V, 0.5A)
2SC5873STPQ ROHM

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SPT, 3
2SC5874S ROHM

获取价格

Medium power transistor (30V, 1.0A)
2SC5875 ROHM

获取价格

Power transistor (30V, 2A)
2SC5876 ROHM

获取价格

Medium power transistor (60V, 0.5A)
2SC5876_1 ROHM

获取价格

Medium power transistor (60V, 0.5A)