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2SC5868TL PDF预览

2SC5868TL

更新时间: 2024-02-13 19:11:33
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
4页 929K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN

2SC5868TL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SC-96
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SC5868TL 数据手册

 浏览型号2SC5868TL的Datasheet PDF文件第2页浏览型号2SC5868TL的Datasheet PDF文件第3页浏览型号2SC5868TL的Datasheet PDF文件第4页 
Medium power transistor (60V, 0.5A)  
2SC5868  
Features  
Dimensions (Unit : mm)  
1) High speed switching.  
(Tf : Typ. : 80ns at IC = 500mA)  
2) Low saturation voltage, typically  
TSMT3  
2.8  
1.6  
:
(Typ. 75mV at IC = 100mA, IB = 10mA)  
3) Strong discharge power for inductive load  
and capacitance load.  
4) Complements the 2SA2090  
(1) Base  
(2) Emitter  
(3) Collector  
0.3 0.6  
Each lead has same dimensions  
Applications  
Abbreviated symbol : VS  
Small signal low frequency amplifier  
High speed switching  
Structure  
NPN Silicon epitaxial planar transistor  
Packaging specifications  
Package  
Taping  
TL  
Code  
Type  
Basic ordering unit (pieces)  
3000  
2SC5868  
Absolute maximum ratings (Ta=25C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
V
V
60  
60  
Collector-emitter voltage  
Emitter-base voltage  
V
6
DC  
I
C
A
0.5  
Collector current  
1  
2  
Pulsed  
I
CP  
A
1.0  
P
C
mW  
°C  
°C  
Power dissipation  
500  
Tj  
Junction temperature  
150  
Tstg  
Range of storage temperature  
55 to 150  
1 Pw=10ms  
2 Each terminal mounted on a recommended land  
www.rohm.com  
2011.03 - Rev.A  
1/3  
c
2011 ROHM Co., Ltd. All rights reserved.  

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