是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-70 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.79 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 250 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5850B | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850C | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850D | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 | |
2SC5850LBTL-E | RENESAS |
获取价格 |
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 | |
2SC5850LDTL-E | RENESAS |
获取价格 |
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 | |
2SC5851 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SC5851A | ETC |
获取价格 |
BJT | |
2SC5851B | ETC |
获取价格 |
BJT | |
2SC5851C | ETC |
获取价格 |
BJT | |
2SC5851FATL-E | RENESAS |
获取价格 |
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3 |