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2SC5850LDTL-E PDF预览

2SC5850LDTL-E

更新时间: 2024-02-05 04:57:38
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管光电二极管放大器
页数 文件大小 规格书
8页 86K
描述
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, CMPAK-3

2SC5850LDTL-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.79
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SC5850LDTL-E 数据手册

 浏览型号2SC5850LDTL-E的Datasheet PDF文件第2页浏览型号2SC5850LDTL-E的Datasheet PDF文件第3页浏览型号2SC5850LDTL-E的Datasheet PDF文件第4页浏览型号2SC5850LDTL-E的Datasheet PDF文件第5页浏览型号2SC5850LDTL-E的Datasheet PDF文件第6页浏览型号2SC5850LDTL-E的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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