Datasheet > 2SC4408TPE6

2SC4408TPE6

更新时间： 2024-09-21 21:05:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关晶体管
页数	文件大小	规格书
4页	129K
描述
TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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2SC4408TPE6 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.79
最大集电极电流 (IC)：	2 A	集电极-发射极最大电压：	50 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

2SC4408TPE6 数据手册

2SC4408

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4408

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

= 0.5 V (max) (I = 1 A)

CE (sat) C

High collector power dissipation: P = 900 mW

High-speed switching: t = 500 ns (typ.)

stg

Complementary to 2SA1680

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.2

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

Storage temperature range

900

°C

―

150

TOSHIBA

2-5J1A

stg

−55 to 150

Weight: 0.36 g (typ.)

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

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