2SC4410H

更新时间： 2024-11-20 12:59:51

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松下 - PANASONIC		/
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中文翻译

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数据手册

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2SC4410H 数据手册

Transistor

2SC4410

Silicon NPN epitaxial planer type

For UHF amplification

Unit: mm

2.1±0.1

Features

0.425

1.25±0.1

0.425

■

●

Allowing the small current and low voltage operation.

●

High transition frequency f_T.

●

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.2±0.1

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

Marking symbol : 2X

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Transition frequency

V_CB= 10V, I_E= 0

_EB= 1.5V, I_C= 0

I_EBO

h_FE

f_T

µA

V_CE= 1V, I_C= 1mA

200

V_CE= 1V, I_C= 1mA, f = 800MHz

V_CB= 1V, I_E= 0, f = 1MHz

GHz

Collector output capacitance

Foward transfer gain

C_ob

| S_21e

0.4

6.0

V_CE= 1V, I_C= 1mA, f = 800MHz

Maximum unilateral power gain

Noise figure

GUM

3.5

Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.

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