Datasheet > 2SC4412

2SC4412

更新时间： 2024-09-21 12:53:43

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	66K
描述
High breakdown voltage. Excellent DC current gain ratio(hFE ratio : 0.95 typ).

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中文翻译

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数据手册

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2SC4412 数据手册

SMD Type

Transistors

Product specification

2SC4412

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High breakdown voltage.

Small reverse transfer capacitance and excellent high

frequency characteristic(Cre : 1.0pF typ).

Excellent DC current gain ratio(hFE ratio : 0.95 typ).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

VEBO

I^C

Rating

300

Unit

300

Collector current (pulse)

Collector dissipation

I^CP

100

P^C

250

Jumction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

Ic^BO

I^EBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

V^CB= 200V , I^E= 0

V^EB= 4V , I^C= 0

0.1

ìA

V^CE= 6V , I^C= 0.1 mA

V^CE= 6V , I^C=1 mA

V^CE= 30V , I^C= 10 mA

V^CB= 30V , f = 1MHz

100

320

DC current Gain

h^FE

Gain bandwidth product

f^T

1.5

MHz

Output capacitance

C^ob

C^re

Reverse transfer capacitance

DC current gain ratio

1.0

h^FE^ratioh^FE1/ h^FE2

0.95

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)I^C= 10mA , I^B= 1mA

V^BE(sat)I^C= 10mA , I^B= 1mA

V^(BR)CBOI^C= 10ìA , I^E= 0

1.0

300

V^(BR)CEO

I^C= 1mA , R^BE=

V^(BR)EBOI^E= 10ìA , I^C= 0

hFE Classification

Marking

Rank

hFE

100 200

160 320

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与2SC4412相关器件

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2SC4412-4	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 50MA I(C) \| SOT-23VAR
2SC4412-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 50MA I(C) \| SOT-23VAR
2SC4413	SANYO	获取价格	Low-Frequency General-Purpose Amp Applications
2SC4413	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC4413	TYSEMI	获取价格	Adoption of FBET process. Low collector-to-emitter saturation voltage.
2SC4414	SANYO	获取价格	High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications
2SC4414R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| SPAK
2SC4414S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| SPAK
2SC4414T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| SPAK
2SC4415	ETC	获取价格