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2SC4417 PDF预览

2SC4417

更新时间: 2024-11-17 22:52:43
品牌 Logo 应用领域
松下 - PANASONIC 电视
页数 文件大小 规格书
2页 39K
描述
Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

2SC4417 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):500 MHzBase Number Matches:1

2SC4417 数据手册

 浏览型号2SC4417的Datasheet PDF文件第2页 
Transistor  
2SC4417  
Silicon NPN epitaxial planer type  
For intermadiate frequency amplification of TV image  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High transition frequency fT.  
1
Satisfactory linearity of forward current transfer ratio hFE  
.
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
45  
35  
V
4
50  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Marking symbol : 2Z  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICEO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCE = 20V, IB = 0  
10  
VCBO  
VCEO  
VEBO  
hFE  
IC = 10µA, IE = 0  
45  
35  
4
IE = 1mA, IB = 0  
V
IE = 10µA, IC = 0  
V
Forward current transfer ratio  
VCB = 10V, IE = –10mA  
IC = 20mA, IB = 2mA  
20  
50  
100  
0.5  
Collector to emitter saturation voltage VCE(sat)  
Transition frequency fT  
V
MHz  
pF  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = –1mA, f = 10.7MHz  
500  
Common emitter reverse transfer capacitance Cre  
1.5  
1

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