Datasheet > 2SC4412

2SC4412

更新时间： 2024-11-20 07:30:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	38K
描述
NPN Triple Diffused Planar Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC4412 数据手册

SMD Type

Transistors

NPN Triple Diffused Planar Silicon Transistor

2SC4412

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High breakdown voltage.

Small reverse transfer capacitance and excellent high

frequency characteristic(Cre : 1.0pF typ).

Excellent DC current gain ratio(hFE ratio : 0.95 typ).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

300

Unit

Collector current (pulse)

Collector dissipation

I^CP

100

250

150

P^C

Jumction temperature

Storage temperature

T^j

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

Ic^BO

I^EBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

VCB = 200V , IE = 0

VEB = 4V , IC = 0

0.1

ìA

V^CE= 6V , IC = 0.1 mA

V^CE= 6V , IC =1 mA

VCE = 30V , IC = 10 mA

VCB = 30V , f = 1MHz

100

320

DC current Gain

h^FE

Gain bandwidth product

f^T

1.5

MHz

Output capacitance

C^ob

C^re

Reverse transfer capacitance

DC current gain ratio

1.0

h^FE^ratiohFE1/ hFE2

0.95

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)IC = 10mA , IB = 1mA

V^BE(sat)IC = 10mA , IB = 1mA

V^(BR)CBOIC = 10ìA , IE = 0

1.0

300

V^(BR)CEO

IC = 1mA , RBE =

V^(BR)EBOIE = 10ìA , IC = 0

hFE Classification

Marking

Rank

hFE

100 200

160 320

www.kexin.com.cn

中文翻译

下载PDF

与2SC4412相关器件

型号	品牌	获取价格	描述	数据表
2SC4412-4	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 50MA I(C) \| SOT-23VAR
2SC4412-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 50MA I(C) \| SOT-23VAR
2SC4413	SANYO	获取价格	Low-Frequency General-Purpose Amp Applications
2SC4413	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC4413	TYSEMI	获取价格	Adoption of FBET process. Low collector-to-emitter saturation voltage.
2SC4414	SANYO	获取价格	High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications
2SC4414R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| SPAK
2SC4414S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| SPAK
2SC4414T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| SPAK
2SC4415	ETC	获取价格