Datasheet > 2SC4420

2SC4420

更新时间： 2024-09-20 22:39:59

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
3页	64K
描述
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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2SC4420 数据手册

Power Transistors

2SC4420

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

15.0±0.3

11.0±0.2

5.0±0.2

Features

High-speed switching

3.2

■

●

High collector to base voltage V_CBO

Wide area of safe operation (ASO)

Satisfactory linearity of foward current transfer ratio h_FE

Full-pack package which can be installed to the heat sink with

φ3.2±0.1

2.0±0.2

●

2.0±0.1

0.6±0.2

one screw

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

5.45±0.3

10.9±0.5

Parameter

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

900

Collector to emitter voltage

1:Base

2:Collector

3:Emitter

800

Emitter to base voltage

Peak collector current

Collector current

TOP–3 Full Pack Package(a)

I_C

Base current

I_B

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 900V, I_E= 0

I_EBO

V_CEO

h_FE1

h_FE2

V_EB= 7V, I_C= 0

I_C= 10mA, I_B= 0

Collector to emitter voltage

800

_CE= 5V, I_C= 0.1A

Forward current transfer ratio

V_CE= 5V, I_C= 0.8A

I_C= 0.8A, I_B= 0.16A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

1.5

_C= 0.8A, I_B= 0.16A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 5V, I_C= 0.15A, f = 1MHz

MHz

µs

0.7

2.5

0.3

I_C= 0.8A, I_B1= 0.16A, I_B2= – 0.32A,

V_CC= 250V

µs

12 3

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