Datasheet > 2SC4413

2SC4413

更新时间： 2024-09-21 12:53:43

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页数	文件大小	规格书
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描述
Adoption of FBET process. Low collector-to-emitter saturation voltage.

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数据手册

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2SC4413 数据手册

SMD Type

TransistIoCrs

Product specification

2SC4413

Features

Adoption of FBET process.

High DC current gain.

Low collector-to-emitter saturation voltage.

High VEBO.

Small Cob.

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

100

Collector current(Pulse)

Base current

I^CP

200

I^B

Collector dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

V^CB= 40V, I^E=0

Min

Typ

Max

0.1

Unit

ìA

Collector cutoff current

I^CBO

I^EBO

h^FE

f^T

Emitter cutoff current

V^EB= 10V, I^C=0

0.1

ìA

DC current gain

V^CE= 5V , I^C= 10mA

V^CE= 10V , I^C= 10mA

V^CB= 10V, f = 1MHz

800 1500 3200

Gain bandwidth product

200

1.5

MHz

Output capacitance

C^ob

Collector-to-emitter saturation voltage

Base-to-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

V^CE(sat)I^C= 50mA , I^B= 1mA

V^BE(sat)I^C= 50mA , I^B= 1mA

V^(BR)CBOI^C= 10ìA , I^E= 0

0.1

0.8

0.5

1.1

I^C= 1mA , R^BE=

IE = 10ìA , IC = 0

V^(BR)CEO

V^(BR)EBO

Marking

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