Datasheet > 2SC4409_04

2SC4409_04

更新时间： 2024-11-30 07:30:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
4页	146K
描述
Power Amplifier Applications Power switching applications

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2SC4409_04 数据手册

2SC4409

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4409

Power Amplifier Applications

Power switching applications

Unit: mm

•

Low collector saturation voltage: V = 0.5V (max) (at I = 1A)

CE (sat) C

High speed switching time: t

Small flat package

= 500ns (typ.)

stg

= 1~2 W (Mounted on a ceramic substrate)

Complementary to 2SA1681

Maximum Ratings

(Ta 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.2

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

Storage temperature range

500

1000

150

−55~150

°C

SC-62

2-5K1A

(Note)

TOSHIBA

stg

Weight: 0.05 g (typ.)

Note: 2SC4409 mounted on a ceramic substrate (250 mm × 0.8 t)

2004-07-07

12 3 4

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