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2SC4410G PDF预览

2SC4410G

更新时间: 2024-11-18 12:59:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 40K
描述
Small Signal Bipolar Transistor, 0.01A I(C), 7V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F2, 3 PIN

2SC4410G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.01 A
集电极-发射极最大电压:7 V最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4000 MHzBase Number Matches:1

2SC4410G 数据手册

 浏览型号2SC4410G的Datasheet PDF文件第2页 
Transistor  
2SC4410  
Silicon NPN epitaxial planer type  
For UHF amplification  
Unit: mm  
2.1±0.1  
Features  
0.425  
1.25±0.1  
0.425  
Allowing the small current and low voltage operation.  
High transition frequency fT.  
1
S-Mini type package, allowing downsizing of the equipment and  
3
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
10  
0.2±0.1  
7
V
2
10  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
50  
Tj  
150  
Marking symbol : 2X  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
1
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Transition frequency  
VCB = 10V, IE = 0  
EB = 1.5V, IC = 0  
IEBO  
hFE  
fT  
V
1
µA  
VCE = 1V, IC = 1mA  
50  
200  
VCE = 1V, IC = 1mA, f = 800MHz  
VCB = 1V, IE = 0, f = 1MHz  
4
GHz  
pF  
Collector output capacitance  
Foward transfer gain  
Cob  
| S21e  
0.4  
6.0  
15  
2
|
VCE = 1V, IC = 1mA, f = 800MHz  
VCE = 1V, IC = 1mA, f = 800MHz  
VCE = 1V, IC = 1mA, f = 800MHz  
dB  
Maximum unilateral power gain  
Noise figure  
GUM  
NF  
dB  
3.5  
dB  
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.  
1

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