Datasheet > 2SC4409(TE12LPPF)

2SC4409(TE12LPPF)

更新时间： 2024-09-21 19:40:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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4页	170K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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2SC4409(TE12LPPF) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

2SC4409(TE12LPPF) 数据手册

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2SC4409

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4409

Power Amplifier Applications

Power switching applications

Unit: mm

•

Low collector saturation voltage: V

= 0.5V (max) (at I = 1A)

CE (sat) C

High speed switching time: t = 500ns (typ.)

stg

Small flat package

= 1~2 W (Mounted on a ceramic substrate)

Complementary to 2SA1681

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.2

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

Storage temperature range

500

1000

150

−55~150

°C

SC-62

2-5K1A

(Note 1)

TOSHIBA

Weight: 0.05 g (typ.)

stg

Note 1: 2SC4409 mounted on a ceramic substrate (250 mm × 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4

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