Datasheet > 2SB1250

2SB1250

更新时间： 2024-11-29 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	78K
描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1250 数据手册

Power Transistors

2SB1250

Silicon PNP epitaxial planar type Darlington

For power amplification

Unit: mm

4.2±0.2

10.0±0.2

5.5±0.2

Complementary to 2SD1890

2.7±0.2

Features

Optimum for 25W HiFi output

■

φ3.1±0.1

●

High foward current transfer ratio h_FE: 5000 to 30000

●

Low collector to emitter saturation voltage V_CE(sat): < –2.5V

●

Full-pack package which can be installed to the heat sink with

1.3±0.2

1.4±0.1

one screw

+0.2

–0.1

0.5

0.8±0.1

Absolute Maximum Ratings (T =25˚C)

■

2.54±0.25

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–100

5.08±0.5

1:Base

–80

2:Collector

3:Emitter

–5

TO–220 Full Pack Package(a)

–6

I_C

–3

Internal Connection

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

Unit

µA

V_CB= –100V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

V_CE= –80V, I_B= 0

Emitter cutoff current

V_EB= –5V, I_C= 0

Collector to emitter voltage

I_C= –30mA, I_B= 0

–80

2000

5000

V_CE= –5V, I_C= –1A

V_CE= –5V, I_C= –2A

I_C= –2A, I_B= –2mA

V_CE= –10V, I_C= – 0.5A, f = 1MHz

Forward current transfer ratio

h_FE2

30000

–2.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–3.0

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

2.0

0.7

MHz

µs

I_C= –2A, I_B1= –2mA, I_B2= 2mA,

V_CC= –50V

µs

^*h_FE2Rank classification

Rank

h_FE2

5000 to 15000 8000 to 30000

12 3

中文翻译

下载PDF

与2SB1250相关器件

型号	品牌	获取价格	描述	数据表
2SB1250P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 3A I(C) \| SOT-186
2SB1250Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 3A I(C) \| SOT-186
2SB1251	ETC	获取价格
2SB1251P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 4A I(C) \| SOT-186
2SB1251Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 4A I(C) \| SOT-186
2SB1252	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1252P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SOT-186
2SB1252Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SOT-186
2SB1253	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1253P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 110V V(BR)CEO \| 6A I(C) \| TO-247VAR