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2SB1255 PDF预览

2SB1255

更新时间: 2024-11-18 06:18:47
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 129K
描述
Silicon PNP Darlington Power Transistors

2SB1255 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SB1255 数据手册

 浏览型号2SB1255的Datasheet PDF文件第2页浏览型号2SB1255的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Darlington Power Transistors  
2SB1255  
DESCRIPTION  
·With TO-3PFa package  
·Optimum for 90W Hi-Fi output  
·High foward current transfer ratio hFE  
·Low collector-emitter saturation voltage  
·Complement to type 2SD1895  
APPLICATIONS  
·Power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absoluaximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDINS  
Open emitter  
VALUE  
-160  
-140  
-8  
UNIT  
V
V
V
A
A
Open base  
Open collector  
-15  
ICP  
Collector current-peak  
-12  
TC=25  
100  
PC  
Collector power dissipation  
W
3
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55~150  

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TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-92
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TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-92
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