Datasheet > 2SB1252P

2SB1252P

更新时间： 2024-11-16 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	71K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SOT-186

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中文翻译

获取价格

数据手册

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2SB1252P 数据手册

Power Transistors

2SB1252

Silicon PNP epitaxial planar type Darlington

Unit: mm

For power amplification

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

ꢀ.7 ^0.ꢀ

Complementary to 2SD1892

φ ꢁ.1 0.1

I Features

•

Optimum for 35 W Hi-Fi output

High forward current transfer ratio h_FE: 5 000 to 30 000

Low collector to emitter saturation voltage V_CE(sat): < 2.5 V

Full-pack package which can be installed to the heat sink with one

screw

1.ꢁ 0.ꢀ

1.4 0.1

+0.ꢀ

–0.1

0.5

0.8 0.1

ꢀ.54 0.ꢁ

5.08 0.5

I Absolute Maximum Ratings T_C= 25°C

1 : Base

2 : Collector

3 : Emitter

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

ꢀ ꢁ

−120

EIAJ : SC-67

TO-220F Package

−100

−5

Internal Connection

−8

I_C

−5

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

−100

Unit

µA

Collector cutoff current

V_CB= −120 V, I_E= 0

I_CEO

V_CE= −100 V, I_B= 0

Emitter cutoff current

I_EBO

V_EB= −5 V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

V_CEO

h_FE1

I_C= −30 mA, I_B= 0

−100

2 000

5 000

V_CE= −5 V, I_C= −1 A

V_CE= −5 V, I_C= −4 A

I_C= −4 A, I_B= −4 mA

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

I_C= −4 A, I_B1= −4 mA, I_B2= 4 mA,

V_CC= −50 V

h_FE2

30 000

−2.5

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)

V_BE(sat)

f_T

−3.0

1.0

0.8

1.0

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE2

5 000 to 15 000 8 000 to 30 000

12 3 4

中文翻译

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与2SB1252P相关器件

型号	品牌	获取价格	描述	数据表
2SB1252Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SOT-186
2SB1253	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1253P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 110V V(BR)CEO \| 6A I(C) \| TO-247VAR
2SB1253Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 110V V(BR)CEO \| 6A I(C) \| TO-247VAR
2SB1254	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1254	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1254	ISC	获取价格	Silicon PNP Power Transistors
2SB1254	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1254_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1254_2014	JMNIC	获取价格	Silicon PNP Power Transistors