Datasheet > 2SB1254Q

2SB1254Q

更新时间： 2024-11-18 20:09:07

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2SB1254Q 数据手册

Power Transistors

2SB1254

Silicon PNP epitaxial planar type darlington

Unit: mm

5.0 0.2

For power amplification

15.0 0.3

11.0 0.2

(3.2)

Complementary to 2SD1894

φ 3.2 0.1

■ Features

• Optimum for 60 W HiFi output

• High forward current transfer ratio h_FE

• Low collector-emitter saturation voltage V_CE(sat)

• Full-pack package which can be installed to the heat sink with one

screw

2.0 0.2

2.0 0.1

0.6 0.2

1.1 0.1

5.45 0.3

■ Absolute Maximum Ratings T_C= 25°C

10.9 0.5

1: Base

2: Collector

3: Emitter

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−160

EIAJ: SC-92

TOP-3F-A1 Package

−140

−5

Internal Connection

Collector current

I_C

I_CP

P_C

−7

Peak collector current

Collector power dissipation

−12

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= −30 mA, I_B= 0

−140

V_CB= −160 V, I_E= 0

V_CE= −140 V, I_B= 0

V_EB= −5 V, I_C= 0

−100

µA



I_CEO

I_EBO

h_FE1

V_CE= −5 V, I_C= −1 A

V_CE= −5 V, I_C= −6 A

2000

5000

h_FE2

30 000

−2.5

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −6 A, I_B= −6 mA

V_BE(sat)I_C= −6 A, I_B= −6 mA

−3.0

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

1.0

1.5

1.2

MHz

µs

I_C= −6 A, I_B1= −6 mA, I_B2= 6 mA

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE2

5000 to 15000 7000 to 21000 8000 to 30000

Publication date: March 2003

SJD00063BED

12 3 4

中文翻译

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与2SB1254Q相关器件

型号	品牌	获取价格	描述	数据表
2SB1254S	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1255	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1255	JMNIC	获取价格	Silicon PNP Darlington Power Transistors
2SB1255	SAVANTIC	获取价格	Silicon PNP Darlington Power Transistors
2SB1255	ISC	获取价格	Silicon PNP Darlington Power Transistors
2SB1255_15	JMNIC	获取价格	Silicon PNP Darlington Power Transistors
2SB1255_2014	JMNIC	获取价格	Silicon PNP Darlington Power Transistors
2SB1255P	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1255Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 140V V(BR)CEO \| 7A I(C) \| TO-247VAR
2SB1255S	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,

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