Datasheet > 2SB1255Q

2SB1255Q

更新时间： 2024-11-17 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	71K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 140V V(BR)CEO \| 7A I(C) \| TO-247VAR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1255Q 数据手册

Power Transistors

2SB1255

Silicon PNP epitaxial planar type Darlington

Unit: mm

For power amplification

5.0 0.ꢁ

15.0 0.ꢀ

11.0 0.ꢁ

(ꢀ.ꢁ)

Complementary to 2SD1895

φ ꢀ.ꢁ 0.1

I Features

•

Optimum for 90 W Hi-Fi output

High forward current transfer ratio h_FE: 5 000 to 30 000

Low collector to emitter saturation voltage V_CE(sat): < −2.5 V

Full-pack package which can be installed to the heat sink with one

screw

ꢁ.0 0.ꢁ

1.1 0.1

ꢁ.0 0.1

0.6 0.ꢁ

5.45 0.ꢀ

I Absolute Maximum Ratings T_C= 25°C

10.9 0.5

ꢁ

1 : Base

2 : Collector

3 : Emitter

ꢀ

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−160

−140

−8

Unit

EIAJ : SC-96

TOP-3F-A Package

Internal Connection

−12

I_C

−15

T_C= 25°C

T_a= 25°C

P_C

100

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

−100

Unit

µA

Collector cutoff current

V_CB= −160 V, I_E= 0

I_CEO

V_CE= −140 V, I_B= 0

Emitter cutoff current

I_EBO

V_EB= −5 V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

V_CEO

h_FE1

I_C= −30 mA, I_B= 0

−140

2 000

5 000

V_CE= −5 V, I_C= −1 A

V_CE= −5 V, I_C= −7 A

I_C= −7 A, I_B= −7 mA

V_CE= −10 V, I_C= − 0.5 A, f = 1 MHz

I_C= −7 A, I_B1= −7 mA, I_B2= 7 mA,

V_CC= −50 V

h_FE2

30 000

−2.5

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)

V_BE(sat)

f_T

−3.0

1.0

1.5

1.2

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE2

5 000 to 15 000 8 000 to 30 000

12 3 4

中文翻译

下载PDF

与2SB1255Q相关器件

型号	品牌	获取价格	描述	数据表
2SB1255S	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1256	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1256A	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-92
2SB1256B	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-92
2SB1256C	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-92
2SB1256T103	ROHM	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/
2SB1256T103B	ROHM	获取价格	Power Bipolar Transistor, 1-Element, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN
2SB1257	ISC	获取价格	Silicon PNP Power Transistors
2SB1257	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General P
2SB1257	SAVANTIC	获取价格	Silicon PNP Power Transistors