Datasheet > 2SB1255_2014

2SB1255_2014

更新时间： 2024-11-19 01:18:55

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	168K
描述
Silicon PNP Darlington Power Transistors

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中文翻译

获取价格

数据手册

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2SB1255_2014 数据手册

JMnic

Product Specification

Silicon PNP Darlington Power Transistors

2SB1255

DESCRIPTION

·With TO-3PFa package

·Optimum for 90W Hi-Fi output

·High foward current transfer ratio h_FE

·Low collector-emitter saturation voltage

·Complement to type 2SD1895

APPLICATIONS

·Power amplification

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-160

-140

-8

UNIT

Open base

Open collector

-15

I_CP

Collector current-peak

-12

T_C=25℃

100

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

中文翻译

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与2SB1255_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB1255P	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1255Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 140V V(BR)CEO \| 7A I(C) \| TO-247VAR
2SB1255S	PANASONIC	获取价格	Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1256	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1256A	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-92
2SB1256B	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-92
2SB1256C	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-92
2SB1256T103	ROHM	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, Plastic/
2SB1256T103B	ROHM	获取价格	Power Bipolar Transistor, 1-Element, Silicon, TO-92, Plastic/Epoxy, 3 Pin, TO-92L, 3 PIN
2SB1257	ISC	获取价格	Silicon PNP Power Transistors