Datasheet > 2SB1251

2SB1251

更新时间： 2024-11-16 23:20:07

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3页	78K
描述

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中文翻译

获取价格

数据手册

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2SB1251 数据手册

Power Transistors

2SB1251

Silicon PNP epitaxial planar type Darlington

For power amplification

Unit: mm

4.2±0.2

10.0±0.2

5.5±0.2

Complementary to 2SD1891

2.7±0.2

Features

Optimum for 30W HiFi output

■

φ3.1±0.1

●

High foward current transfer ratio h_FE: 5000 to 30000

●

Low collector to emitter saturation voltage V_CE(sat): < –3.0V

●

Full-pack package which can be installed to the heat sink with

1.3±0.2

1.4±0.1

one screw

+0.2

–0.1

0.5

0.8±0.1

Absolute Maximum Ratings (T =25˚C)

■

2.54±0.25

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–110

5.08±0.5

1:Base

–90

2:Collector

3:Emitter

–5

TO–220 Full Pack Package(a)

–7

I_C

–4

Internal Connection

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

Unit

µA

V_CB= –110V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

V_CE= –90V, I_B= 0

Emitter cutoff current

V_EB= –5V, I_C= 0

Collector to emitter voltage

I_C= –30mA, I_B= 0

–90

2000

5000

V_CE= –5V, I_C= –1A

V_CE= –5V, I_C= –3A

I_C= –3A, I_B= –3mA

V_CE= –10V, I_C= – 0.5A, f = 1MHz

Forward current transfer ratio

h_FE2

30000

–3.0

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–3.0

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

1.0

0.8

1.0

MHz

µs

I_C= –2A, I_B1= –2mA, I_B2= 2mA,

V_CC= –50V

µs

^*h_FE2Rank classification

Rank

h_FE2

5000 to 15000 8000 to 30000

12 3

中文翻译

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与2SB1251相关器件

型号	品牌	获取价格	描述	数据表
2SB1251P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 4A I(C) \| SOT-186
2SB1251Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 4A I(C) \| SOT-186
2SB1252	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1252P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SOT-186
2SB1252Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| SOT-186
2SB1253	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1253P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 110V V(BR)CEO \| 6A I(C) \| TO-247VAR
2SB1253Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 110V V(BR)CEO \| 6A I(C) \| TO-247VAR
2SB1254	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1254	JMNIC	获取价格	Silicon PNP Power Transistors