Datasheet > 2SB1182TL/P

2SB1182TL/P

更新时间： 2024-11-06 06:15:27

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
4页	90K
描述
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1182TL/P 数据手册

2SB1188 / 2SB1182 / 2SB1240

Transistors

Medium power transistor (−32V, −2A)

2SB1188 / 2SB1182 / 2SB1240

zExternal dimensions (Unit : mm)

zFeatures

1) Low V^CE(sat).

2SB1188

2SB1182

V^CE(sat)= −0.5V (Typ.)

(I^C/IB = −2A / −0.2A)

2) Complements the 2SD1766 / 2SD1758 /

2SD1862.

+0.2

2.3

6.5 0.2

+0.2

4.5

−

0.1

C0.5

−0.1

0.2

5.1

1.5

0.5 0.1

−

0.1

1.6 0.1

−0.1

0.65 0.1

0.75

(1) (2) (3)

0.1

0.4

0.9

−0.05

0.55 0.1

1.0 0.2

0.5 0.1

3.0 0.2

0.4 0.1

1.5 0.1

0.4 0.1

1.5 0.1

2.3 0.2 2.3 0.2

zStructure

Epitaxial planar type

PNP silicon transistor

(1) (2) (3)

(1) Base

(2) Collector

(3) Emitter

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

ROHM : CPT3

EIAJ : SC-63

Abbreviated symbol: BC

∗

2SB1240

2.5 0.2

6.8 0.2

0.65Max.

0.5 0.1

(1) (2)

2.54

(3)

2.54

1.05

0.45 0.1

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−40

−32

−5

Unit

VCBO

VCEO

VEBO

−2

A(DC)

Collector current

A (Pulse)

−3

∗

0.5

2SB1188

)

∗

Collector power

W (Tc=25°C

2SB1182

2SB1240

dissipation

∗

Junction temperature

Storage temperature

1 Single pulse, Pw=100ms

150

°C

Tstg

−55 to 150

∗

2 When mounted on a 40

40×

0.7 mm ceramic board.

3 Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

Rev.A

1/3

12 3 4

中文翻译

下载PDF

与2SB1182TL/P相关器件

型号	品牌	获取价格	描述	数据表
2SB1182TL/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182TL/Q	ROHM	获取价格	2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
2SB1182TL/R	ROHM	获取价格	2000mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
2SB1182TLQ	ROHM	获取价格	Power Transistor (â80V, â1A)
2SB1182TLR	ROHM	获取价格	Medium power transistor (32V,2A)
2SB1182TR/P	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182TR/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1182TR/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1183	ROHM	获取价格	Darlington connection for high DC current gain.
2SB1183F5	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 40V V(BR)CEO \| 2A I(C) \| TO-252