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2SB1184 PDF预览

2SB1184

更新时间: 2024-11-26 17:01:11
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 191K
描述
50V,3A,Medium Power PNP Bipolar Transistor

2SB1184 数据手册

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Product specification  
Power Transistor  
2SB1184  
FEATURES  
Low VCE(sat).  
Pb  
Lead-free  
VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A)  
Complements the 2SD1760.  
APPLICATIONS  
Epitaxial planar type.  
PNP silicon transistor.  
TO-252  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
2SB1184  
TO-252  
80/Tube or2500/Tape Reel  
B1184  
: none is for Lead Free package;  
“G” is for Halogen Free package.  
MAXIMUM RATING operating temperature range applies unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Volage  
VCBO  
-60  
V
Collector-Emitter Voltage  
VCEO  
-50  
V
Emitter-Base Voltage  
VEBO  
IC  
-5  
-3  
V
A
Collector Current DC)  
Collector Current (Pulse) *1  
Collector Power Dissipation  
ICP  
PC  
-4.5  
1
A
W
Thermal Resistance, Junction−to−Ambient  
Junction temperature  
RθJA  
Tj  
100  
150  
/W  
Storage temperature  
Tj ,Tstg  
-55 to +150  
*1 Single pulse, Pw=100ms  
STM0008A  
www.gmesemi.com  
1

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