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2SB1182TR/P PDF预览

2SB1182TR/P

更新时间: 2024-11-25 13:04:11
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 126K
描述
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,

2SB1182TR/P 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:10 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SB1182TR/P 数据手册

 浏览型号2SB1182TR/P的Datasheet PDF文件第2页浏览型号2SB1182TR/P的Datasheet PDF文件第3页浏览型号2SB1182TR/P的Datasheet PDF文件第4页 
Transistors  
Medium Power Transistor (32V, 2A)  
2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /  
2SD1919 / 2SD1227M  
FFeatures  
FExternal dimensions (Units: mm)  
1) Low VCE(sat).  
VCE(sat) = 0.5V (Typ.)  
(IC / IB = 2A / 0.2A)  
2) Complements the  
2SB1188 / 2SB1182 / 2SB1240 /  
2SB891F / 2SB822 / 2SB1277 /  
2SB911M  
FStructure  
Epitaxial planar type  
NPN silicon transistor  
(96-217-B24)  
256  

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