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2SB1184/R PDF预览

2SB1184/R

更新时间: 2024-09-23 13:04:11
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 90K
描述
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,

2SB1184/R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.62最大集电极电流 (IC):3 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSIP-T3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:PNP功耗环境最大值:15 W
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Copper (Sn/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzVCEsat-Max:1 V
Base Number Matches:1

2SB1184/R 数据手册

 浏览型号2SB1184/R的Datasheet PDF文件第2页浏览型号2SB1184/R的Datasheet PDF文件第3页浏览型号2SB1184/R的Datasheet PDF文件第4页 
2SB1184 / 2SB1243  
Transistors  
Power Transistor (60V, 3A)  
2SB1184 / 2SB1243  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low VCE(sat).  
2SB1184  
2SB1243  
VCE(sat) = -0.5V (Typ.)  
(IC/IB = -2A / -0.2A)  
2.5 0.2  
6.8 0.2  
+0.2  
2.3  
6.5 0.2  
0.1  
C0.5  
+0.2  
5.1  
0.5 0.1  
0.1  
2) Complements the 2SD1760 / 2SD1864.  
0.65Max.  
0.65 0.1  
0.75  
0.9  
0.55 0.1  
1.0 0.2  
zStructure  
Epitaxial planar type  
PNP silicon transistor  
0.5 0.1  
2.3 0.2 2.3 0.2  
(1) (2) (3)  
(1) (2)  
2.54  
(3)  
2.54  
1.05  
0.45 0.1  
(1) Base  
(1) Emitter  
ROHM : CPT3  
EIAJ : SC-63  
(2) Collector  
(3) Emitter  
ROHM : ATV  
(2) Collector  
(3) Base  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
60  
50  
5  
V
V
V
I
C
3  
1
A (DC)  
W
Collector power  
dissipation  
2SB1184  
2SB1243  
15  
1
W (TC=25°C)  
P
C
1  
W
Tj  
150  
°C  
°C  
Junction temperature  
Storage temperature  
Tstg  
55 to 150  
1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.  
Rev.A  
1/3  

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