是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.62 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 180 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 功耗环境最大值: | 15 W |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Copper (Sn/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 70 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1184_1 | ROHM |
获取价格 |
Power Transistor (−60V, −3A) | |
2SB1184_10 | ROHM |
获取价格 |
Power Transistor (-60V, -3A) | |
2SB1184F5 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252VAR | |
2SB1184F5/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1184F5/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1184F5/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1184F5P | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 | |
2SB1184F5Q | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 | |
2SB1184F5R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 | |
2SB1184F5TLP | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, |