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2SB1184Q PDF预览

2SB1184Q

更新时间: 2024-11-24 23:20:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 82K
描述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA

2SB1184Q 数据手册

 浏览型号2SB1184Q的Datasheet PDF文件第2页浏览型号2SB1184Q的Datasheet PDF文件第3页 
2SB1184 / 2SB1243  
Transistors  
Power Transistor (60V, 3A)  
2SB1184 / 2SB1243  
!External dimensions (Units : mm)  
!Features  
1) Low VCE(sat).  
2SB1184  
2SB1243  
VCE(sat) = -0.5V (Typ.)  
(IC/IB = -2A / -0.2A)  
2) Complements the 2SD1760 / 2SD1864.  
2.5 0.2  
+0.2  
0.1  
6.8 0.2  
2.3  
6.5 0.2  
C0.5  
+0.2  
5.1  
0.5 0.1  
0.1  
0.65Max.  
0.65 0.1  
0.75  
0.9  
0.55 0.1  
1.0 0.2  
0.5 0.1  
2.3 0.2 2.3 0.2  
(1) (2) (3)  
!Structure  
Epitaxial planar type  
PNP silicon transistor  
(1) (2)  
(3)  
2.54  
2.54  
1.05  
0.45 0.1  
(1) Base  
(2) Collector  
(3) Emitter  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : CPT3  
EIAJ : SC-63  
ROHM : ATV  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
60  
50  
5  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
V
V
V
I
C
3  
A (DC)  
Collector current  
I
CP  
4.5  
A (Pulse) 1  
1
15  
1
W
Collector power  
dissipation  
2SB1184  
2SB1243  
W (T =25°C)  
C
P
C
2  
W
Tj  
150  
°C  
°C  
Junction temperature  
Tstg  
55~+150  
Storage temperature  
1 Single pulse, Pw=100ms  
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.  
1/3  

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