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2SB1184-R-TP-HF PDF预览

2SB1184-R-TP-HF

更新时间: 2024-11-25 16:25:07
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 620K
描述
Small Signal Bipolar Transistor,

2SB1184-R-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.62湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:10
Base Number Matches:1

2SB1184-R-TP-HF 数据手册

 浏览型号2SB1184-R-TP-HF的Datasheet PDF文件第2页浏览型号2SB1184-R-TP-HF的Datasheet PDF文件第3页浏览型号2SB1184-R-TP-HF的Datasheet PDF文件第4页 
2SB1184-P  
2SB1184-Q  
2SB1184-R  
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
PNP Silicon  
Epitaxial Transistors  
·
·
·
Moisture Sensitivity Level 1  
Low Collector Saturation Voltage  
·
·
Execllent current-to-gain characteristics  
Maximum Thermal Resistance: 125oC/W Junction to Ambient  
DPAK  
Maximum Ratings  
J
Symbol  
Rating  
Rating  
Unit  
H
VCEO  
Collector-Emitter Voltage  
-50  
V
1
2
3
C
I
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
-60  
-5.0  
-3.0  
V
V
A
O
F
E
PC  
Collector power dissipation  
1.0  
W
TJ  
Junction Temperature  
Storage Temperature  
150  
к
к
M
TSTG  
-55 to +150  
V
K
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
V(BR)CBO  
Collector-base Breakdown Voltage  
(IC=-50uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc, IB=0)  
Emitter-base Breakdown Voltage  
(IE=-50uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=-40Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VEB=-4Vdc, IC=0)  
DC Current Gain  
(IC=-0.5Adc, VCE=-3.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-2Adc, IB=-200mAdc)  
-60  
---  
---  
Vdc  
G
V(BR)CEO  
V(BR)EBO  
ICBO  
-50  
-5  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
Q
---  
-1.0  
-1.0  
uAdc  
uAdc  
A
IEBO  
---  
L
D
B
hFE(1)  
VCE(sat)  
fT  
82  
---  
---  
70  
50  
390  
-1.0  
---  
---  
Vdc  
MHz  
pF  
PIN 1. BASE  
PIN 2. COLLECTOR  
PIN 3. EMITTER  
---  
DIMENSIONS  
Transition Frequency  
(VCE=-5Vdc, IC=-500mAdc,f=30MHz)  
Collector output capacitance  
(VCB=-10Vdc, IE=0,f=1.0MHz)  
INCHES  
MAX  
MM  
Cob  
---  
---  
DIM  
A
B
C
D
E
F
MIN  
MIN  
MAX  
2.40  
0.13  
0.86  
0.58  
6.70  
5.46  
NOTE  
0.087  
0.000  
0.026  
0.018  
0.256  
0.201  
0.094  
0.005  
0.034  
0.023  
0.264  
0.215  
2.20  
0.00  
0.66  
0.46  
6.50  
5.10  
G
H
I
J
K
L
M
O
Q
V
0.190  
4.83  
0.236  
0.086  
0.386  
0.244  
0.094  
0.409  
6.00  
2.18  
9.80  
6.20  
2.39  
10.40  
CLASSIFICATION OF HFE (1)  
Rank  
P
Q
R
0.114  
0.063  
0.043  
0.000  
2.90  
1.60  
0.055  
0.067  
1.40  
1.70  
Range  
82-180  
120-270  
180-390  
0.051  
0.012  
1.10  
0.00  
1.30  
0.30  
0.211  
5.35  
www.mccsemi.com  
1 of 4  
Revision: B  
2013/01/01  

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