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2SB1185 PDF预览

2SB1185

更新时间: 2024-11-25 06:16:15
品牌 Logo 应用领域
锦美电子 - JMNIC 晶体晶体管局域网
页数 文件大小 规格书
3页 56K
描述
Silicon PNP Power Transistors

2SB1185 数据手册

 浏览型号2SB1185的Datasheet PDF文件第2页浏览型号2SB1185的Datasheet PDF文件第3页 
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB1185  
DESCRIPTION  
·
·With TO-220Fa package  
·Low collector saturation votlage  
·Complement to type 2SD1762  
APPLICATIONS  
·For use in low frequency power  
amplifer applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
2
Collector  
Base  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector -emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-60  
UNIT  
V
V
V
A
A
Open base  
-50  
Open collector  
-5  
-3  
ICM  
Collector current-peak  
-4.5  
2.0  
Ta=25  
TC=25℃  
PC  
Collector power dissipation  
W
25  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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