Datasheet > 2SB1186A_2014

2SB1186A_2014

更新时间： 2024-11-26 01:20:03

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	166K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1186A_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1186A

DESCRIPTION

·With TO-220Fa package

·Low collector saturation votlage

·Complement to type 2SD1763A

·High breakdown voltage

APPLICATIONS

·For use in low frequency power

amplifer applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-160

-5

UNIT

Open base

Open collector

-1.5

I_CM

Collector current-peak

-3.0

T_a=25℃

T_C=25℃

2.0

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

中文翻译

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与2SB1186A_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB1186AC7/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186AC7/DE	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186AC7/E	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186AC7F	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186AD	ROHM	获取价格	暂无描述
2SB1186AE	ISC	获取价格	Transistor
2SB1186AE	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186C7	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186C7/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla
2SB1186C7/DE	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla